Ultra-Scaled Tellurium Nanowire Growth for Next-Generation Microelectronics

Abstract

The purpose of the study is to develop a growth recipe for producing nanowires. Tellurium (Te) is a promising replacement for the current material, silicon, used for transistors. The growth process of tellurium starts with 1D nanowires and progresses to 2D nanoflakes.[1] This project aims to adjust the key factors in a growth recipe to increase the production of 1D nanowires.[2] It was determined that a growth temperature of 130℃, growth time of 3 hours, and 0.026 grams of PVP were the best factors for nanowire production. In addition, a MATLAB-based code was developed to automatically determine the yield of the tellurium nanowires through image recognition algorithms, enabling high-throughput, fast-turnaround identification of Tellurium nanowire growth quantity.