Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD

dc.contributor.authorKim, Nam-Heonen_US
dc.contributor.authorPark, Jong-Hyuken_US
dc.contributor.authorMawst, Luke J.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.contributor.authorKanskar, Manojen_US
dc.date.accessioned2007-07-13T19:32:54Z
dc.date.available2007-07-13T19:32:54Z
dc.date.issued2006en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
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dc.format.mimetypeapplication/pdfen_US
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dc.identifier.citationKim, N.H., Park, J.-H., Mawst, L.J., Kuech, T.F., & Kanskar, M. (2006). Temperature Sensitivity Of In Ga As Quantum Dot Lasers Grown By Mocvd. Ieee Photonics Technology Letters, 18(8), 989-991.en_US
dc.identifier.doihttp://dx.doi.org/10.1109/LPT.2006.872283en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11048
dc.publisherInstitute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United Statesen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=68en_US
dc.rightsCopyright 2006 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleTemperature sensitivity of InGaAs quantum-dot lasers grown by MOCVDen_US

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