Increased critical current density in Nb-Ti wires having Nb artificial pinning centers

dc.contributor.authorHeussner, Robert W.en_US
dc.contributor.authorMarquardt, Jesse D.en_US
dc.contributor.authorLee, Peter J.en_US
dc.contributor.authorLarbalestier, David C.en_US
dc.date.accessioned2007-07-13T19:34:44Z
dc.date.available2007-07-13T19:34:44Z
dc.date.issued1997en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent147632 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Heussner, R.W., Marquardt, J.D., Lee, P.J., & Larbalestier, D.C. (1997). Increased Critical Current Density In Nb Ti Wires Having Nb Artificial Pinning Centers. Applied Physics Letters, 70(7), 901-903. and may be found at http://link.aip.org/link/?apl/70/901en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.118238en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11288
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleIncreased critical current density in Nb-Ti wires having Nb artificial pinning centersen_US

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