Structural disorder induced in hydrogenated amorphous silicon by light soaking

dc.contributor.authorGibson, J. M.
dc.contributor.authorTreacy, M. M. J.
dc.contributor.authorVoyles, P. M.
dc.contributor.authorJin, H-C.
dc.contributor.authorAbelson, J. R.
dc.date.accessioned2012-11-23T12:05:14Z
dc.date.available2012-11-23T12:05:14Z
dc.date.issued1998
dc.descriptionhttp://dx.doi.org/10.1063/1.122683en
dc.description.abstractWe show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler?Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network.en
dc.identifier.citationApplied Physics Letters 73, 3093 (1998)en
dc.identifier.urihttp://digital.library.wisc.edu/1793/63392
dc.subjectamorphous siliconen
dc.subjectmedium range orderen
dc.subjectfluctuation electron microscopyen
dc.titleStructural disorder induced in hydrogenated amorphous silicon by light soakingen
dc.typeArticleen

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