Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers
| dc.contributor.author | Tansu, Nelson | en_US |
| dc.contributor.author | Chang, Ying-Lan | en_US |
| dc.contributor.author | Takeuchi, Tetsuya | en_US |
| dc.contributor.author | Bour, David P. | en_US |
| dc.contributor.author | Corzine, Scott W. | en_US |
| dc.contributor.author | Tan, Michael R.T. | en_US |
| dc.contributor.author | Mawst, Luke J. | en_US |
| dc.date.accessioned | 2007-07-13T19:33:04Z | |
| dc.date.available | 2007-07-13T19:33:04Z | |
| dc.date.issued | 2002 | en_US |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 380475 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Tansu, N., Chang, Y.L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R.T., et al. (2002). Temperature Analysis And Characteristics Of Highly Strained In Ga As Ga As P Ga As (Λ > 1.17 ΜM) Quantum Well Lasers. Ieee Journal Of Quantum Electronics, 38(6), 640-651. | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1109/JQE.2002.1005415 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/11070 | |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc | en_US |
| dc.relation.ispartof | http://www.ieee.org/ | en_US |
| dc.relation.ispartof | http://ieeexplore.ieee.org/servlet/opac?punumber=3 | en_US |
| dc.rights | Copyright 2002 Institute of Electrical and Electronics Engineers | en_US |
| dc.rights | ©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | en_US |
| dc.title | Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers | en_US |
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