Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy

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dc.contributor.authorZhang, Lingen_US
dc.contributor.authorTang, Hongfeien_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:37Z
dc.date.available2007-07-13T19:29:37Z
dc.date.issued2001en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent92970 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Zhang, L., Tang, H.F., & Kuech, T.F. (2001). Effect Of Sb As A Surfactant During The Lateral Epitaxial Overgrowth Of Ga N By Metalorganic Vapor Phase Epitaxy. Applied Physics Letters, 79(19), 3059-3061. and may be found at http://link.aip.org/link/?apl/79/3059en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1415774en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10616
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleEffect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxyen_US

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