Direct observation by reflection high-energy electron diffraction of amorphous-to-crystalline transition in the growth of Sb on GaAs(110)

dc.contributor.authorSavage, Donald E.en_US
dc.contributor.authorLagally, Max G.en_US
dc.date.accessioned2007-07-13T19:18:23Z
dc.date.available2007-07-13T19:18:23Z
dc.date.issued1987en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
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dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Savage, D.E., & Lagally, M.G. (1987). Direct Observation By Reflection High Energy Electron Diffraction Of Amorphous To Crystalline Transition In The Growth Of Sb On Ga As(110). Applied Physics Letters, 50(24), 1719-21. and may be found at http://link.aip.org/link/?apl/50/1719en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.97726en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/9130
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1987 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleDirect observation by reflection high-energy electron diffraction of amorphous-to-crystalline transition in the growth of Sb on GaAs(110)en_US

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