Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy

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dc.contributor.authorMa, Jianen_US
dc.contributor.authorGarni, Bradley J.en_US
dc.contributor.authorPerkins, Nathan R.en_US
dc.contributor.authorO'Brien, William L.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.contributor.authorLagally, Max G.en_US
dc.date.accessioned2007-07-13T19:29:55Z
dc.date.available2007-07-13T19:29:55Z
dc.date.issued1996en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent63158 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Jian Ma, G.B., Perkins, N., O'Brien, W.L., Kuech, T.F., & Lagally, M.G. (1996). Photoemission Spectroscopy Studies Of The Surface Of Ga N Films Grown By Vapor Phase Epitaxy. Applied Physics Letters, 69(22), 3351-3. and may be found at http://link.aip.org/link/?apl/69/3351en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.117303en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10656
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titlePhotoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxyen_US

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