Room-temperature, mid-infrared (λ=4.7 μm) electroluminescence from single-stage intersubband GaAs-based edge emitters
Loading...
Files
Date
Authors
Xu, Dapeng
Mirabedini, Ali R.
D'Souza, Mithun A.
Li, Shuang
Botez, Dan
Lyakh, Arkadiy
Shen, Yu-Jiun
Zory, Peter S.
Gmachl, Claire F.
Advisors
License
DOI
http://dx.doi.org/10.1063/1.1819518
Type
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics Inc., Melville, NY 11747-4502, United States
Grantor
Abstract
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Keywords
Related Material and Data
Citation
The following article appeared in Xu, D.P., Mirabedini, A., D'Souza, M., Li, S., Botez, D., Lyakh, A., et al. (2004). Room Temperature, Mid Infrared (Λ=4.7 ΜM) Electroluminescence From Single Stage Intersubband Ga As Based Edge Emitters. Applied Physics Letters, 85(20), 4573-4575. and may be found at http://link.aip.org/link/?apl/85/4573