High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
| dc.contributor.author | Mirabedini, Ali R. | en_US |
| dc.contributor.author | Mawst, Luke J. | en_US |
| dc.contributor.author | Botez, Dan | en_US |
| dc.contributor.author | Marsland, Robert A. | en_US |
| dc.date.accessioned | 2007-07-13T19:32:12Z | |
| dc.date.available | 2007-07-13T19:32:12Z | |
| dc.date.issued | 1997 | en_US |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 258797 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | The following article appeared in Mirabedini, A.R., Mawst, L.J., Botez, D., & Marsland, R.A. (1997). High Peak Current Density Strained Layer In0.3 Ga0.7 As/Al0.8 Ga0.2 As Resonant Tunneling Diodes Grown By Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 70(21), 2867-9. and may be found at http://link.aip.org/link/?apl/70/2867 | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.119027 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/10958 | |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://apl.aip.org/ | en_US |
| dc.rights | Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition | en_US |
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