High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition
| dc.contributor.author | Chen, Charlie Chung-Ping | en_US |
| dc.contributor.author | Chang, Y. Austin | en_US |
| dc.contributor.author | Huang, Jen-Wu | en_US |
| dc.contributor.author | Kuech, Thomas F. | en_US |
| dc.date.accessioned | 2007-07-13T19:24:36Z | |
| dc.date.available | 2007-07-13T19:24:36Z | |
| dc.date.issued | 1994 | en_US |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 474133 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | The following article appeared in Chen, C.-P., Chang, Y.A., Huang, J.-W., & Kuech, T.F. (1994). High Schottky Barrier Height Of The Al/N Ga As Diodes Achieved By Sputter Deposition. Applied Physics Letters, 64(11), 1413-15. and may be found at http://link.aip.org/link/?apl/64/1413 | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.111900 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/9956 | |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://apl.aip.org/ | en_US |
| dc.rights | Copyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition | en_US |
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