Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er
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Kuech, Thomas F.
Perkins, Nathan R.
Bray, Kevin L.
Zhang, Ling
Safvi, Syed A.
Hansen, Darren Michael
Zhang, Rong
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http://dx.doi.org/10.1063/1.121034
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American Institute of Physics
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The following article appeared in Hansen, D.M., Zhang, A.R., Perkins, N.R., Safvi, S., Zhang, L., Bray, K.L., et al. (1998). Photoluminescence Of Erbium Implanted Ga N And In Situ Doped Ga N:Er. Applied Physics Letters, 72(10), 1244-6. and may be found at http://link.aip.org/link/?apl/72/1244