Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl
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Ingerly, Douglas B.
Chen, Yong
Takeuchi, Takao
William, R.S.
Chang, Y. Austin
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http://dx.doi.org/10.1063/1.126983
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American Institute of Physics
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The following article appeared in Ingerly, D.B., Chen, Y., Takeuchi, T., William, R.S., & Chang, Y.A. (2000). Low Resistance Ohmic Contacts To N Ga N And N Al Ga N Using Ni Al. Applied Physics Letters, 77(3), 382-4. and may be found at http://link.aip.org/link/?apl/77/382