Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism

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dc.contributor.authorChen, David Y.en_US
dc.contributor.authorChang, Y. Austinen_US
dc.contributor.authorSwenson, Douglasen_US
dc.date.accessioned2007-07-13T19:17:03Z
dc.date.available2007-07-13T19:17:03Z
dc.date.issued1997en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent112546 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Chen, D.Y., Chang, Y.A., & Swenson, D. (1997). Thermally Stable Pd In Ohmic Contacts To N Ga As Via Exchange Mechanism. Journal Of Applied Physics, 81(1), 297-300. and may be found at http://link.aip.org/link/?jap/81/297en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.363848en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/8956
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleThermally stable PdIn ohmic contacts to n-GaAs via exchange mechanismen_US

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