Chemical bonding and electronic properties of SeS2-treated GaAs(100)

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dc.contributor.authorSun, Jingxien_US
dc.contributor.authorSeo, Dong Juen_US
dc.contributor.authorO'Brien, William L.en_US
dc.contributor.authorHimpsel, Franz J.en_US
dc.contributor.authorEllis, Arthur B.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:41Z
dc.date.available2007-07-13T19:29:41Z
dc.date.issued1999en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent151429 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Jingxi Dong, S. Ju Seo, O'Brien, W.L., Himpsel, F.J., Ellis, A.B., & Kuech, T.F. (1999). Chemical Bonding And Electronic Properties Of Se S2 Treated Ga As(100). Journal Of Applied Physics, 85(2), 969-77. and may be found at http://link.aip.org/link/?jap/85/969en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.369217en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10626
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleChemical bonding and electronic properties of SeS2-treated GaAs(100)en_US

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