InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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dc.contributor.authorMoran, Peter D.en_US
dc.contributor.authorHansen, Darren Michaelen_US
dc.contributor.authorMatyi, Richard J.en_US
dc.contributor.authorCederberg, Jeffrey G.en_US
dc.contributor.authorMawst, Luke J.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:33:12Z
dc.date.available2007-07-13T19:33:12Z
dc.date.issued1999en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent125711 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, L.J., & Kuech, T.F. (1999). In Ga As Heteroepitaxy On Ga As Compliant Substrates: X Ray Diffraction Evidence Of Enhanced Relaxation And Improved Structural Quality. Applied Physics Letters, 75(11), 1559-1561. and may be found at http://link.aip.org/link/?apl/75/1559en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.124754en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11088
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleInGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural qualityen_US

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