Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
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Khandekar, Anish A.
Hawkins, Brian E.
Kuech, Thomas F.
Yeh, Jeng-Ya
Mawst, Luke J.
Meyer, Jerry R.
Vurgaftman, Igor
Tansu, Nelson
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http://dx.doi.org/10.1063/1.2148620
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American Institute of Physics Inc., Melville, NY 11747-4502, United States
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The following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525