Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2
| dc.contributor.author | Geisz, John F. | en_US |
| dc.contributor.author | Kuech, Thomas F. | en_US |
| dc.contributor.author | Ellis, Arthur B. | en_US |
| dc.date.accessioned | 2007-07-13T19:28:21Z | |
| dc.date.available | 2007-07-13T19:28:21Z | |
| dc.date.issued | 1995 | en_US |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 1117896 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | The following article appeared in Geisz, J.F., Kuech, T.F., & Ellis, A.B. (1995). Changing Photoluminescence Intensity From Ga As/Al0.3 Ga0.7 As Heterostructures Upon Chemisorption Of So2. Journal Of Applied Physics, 77(3), 1233-1240. and may be found at http://link.aip.org/link/?jap/77/1233 | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.358924 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/10450 | |
| dc.publisher | American Inst of Physics, Woodbury, NY, USA | en_US |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://jap.aip.org | en_US |
| dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2 | en_US |
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