The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

dc.contributor.authorTansu, Nelsonen_US
dc.contributor.authorMawst, Luke J.en_US
dc.date.accessioned2007-07-13T19:33:00Z
dc.date.available2007-07-13T19:33:00Z
dc.date.issued2003en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
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dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Tansu, N., & Mawst, L. J. (2003). The Role Of Hole Leakage In 1300 Nm In Ga As N Quantum Well Lasers. Applied Physics Letters, 82(10), 1500-1502. and may be found at http://link.aip.org/link/?apl/82/1500en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1558218en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11062
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleThe role of hole leakage in 1300-nm InGaAsN quantum-well lasersen_US

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