SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study
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Rehder, Eric M.
Inoki, Carlos Kazuo
Kuan, Tung-Sheng
Kuech, Thomas F.
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http://dx.doi.org/10.1063/1.1628406
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American Institute of Physics
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The following article appeared in Rehder, E.M., Inoki, C.K., Kuan, T.S., & Kuech, T.F. (2003). Si Ge Relaxation On Silicon On Insulator Substrates: An Experimental And Modeling Study. Journal Of Applied Physics, 94(12), 7892-903. and may be found at http://link.aip.org/link/?jap/94/7892