Three-dimensional atom mapping of dopants in Si nanostructures

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dc.contributor.authorThompson, Keithen_US
dc.contributor.authorBooske, John H.en_US
dc.contributor.authorLarson, David J.en_US
dc.contributor.authorKelly, Thomas F.en_US
dc.date.accessioned2007-07-13T19:26:52Z
dc.date.available2007-07-13T19:26:52Z
dc.date.issued2005en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent295394 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Thompson, K., Booske, J.H., Larson, D.J., & Kelly, T.F. (2005). Three Dimensional Atom Mapping Of Dopants In Si Nanostructures. Applied Physics Letters, 87(5), -052108. and may be found at http://link.aip.org/link/?apl/87/en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10254
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleThree-dimensional atom mapping of dopants in Si nanostructuresen_US

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