Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

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dc.contributor.authorZhang, Rongen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:44Z
dc.date.available2007-07-13T19:29:44Z
dc.date.issued1998en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent67922 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Zhang, R., & Kuech, T.F. (1998). Photoluminescence Of Carbon In Situ Doped Ga N Grown By Halide Vapor Phase Epitaxy. Applied Physics Letters, 72(13), 1611-13. and may be found at http://link.aip.org/link/?apl/72/1611en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.121144en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10632
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titlePhotoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxyen_US

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