An investigation of the effects of iron in p+n silicon diodes for simulated plasma source ion implantation studies

dc.contributor.authorBrown, Kelly M.en_US
dc.contributor.authorShohet, J. Leonen_US
dc.contributor.authorBooske, John H.en_US
dc.contributor.authorGearhart, Steven S.en_US
dc.contributor.authorLiu, Henley L.en_US
dc.contributor.authorSnodgrass, Thomas G.en_US
dc.contributor.authorSpeth, Robert R.en_US
dc.date.accessioned2007-07-13T19:27:50Z
dc.date.available2007-07-13T19:27:50Z
dc.date.issued1999en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent157573 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationBrown, K.M., Shohet, J.L., Booske, J.H., Gearhart, S.S., Liu, H.L., Snodgrass, T.G., et al. (1999). An Investigation Of The Effects Of Iron In P+N Silicon Diodes For Simulated Plasma Source Ion Implantation Studies. Ieee Transactions On Semiconductor Manufacturing, 12(4), 452-6.en_US
dc.identifier.doihttp://dx.doi.org/10.1109/66.806122en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10382
dc.publisherIEEEen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=66en_US
dc.rightsCopyright 1999 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleAn investigation of the effects of iron in p+n silicon diodes for simulated plasma source ion implantation studiesen_US

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