Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy
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Huang, Jen-Wu
Kuech, Thomas F.
Lu, Hongqiang
Bhat, Ishwara
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http://dx.doi.org/10.1063/1.116144
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American Institute of Physics
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The following article appeared in Huang, J.W., Kuech, T.F., Hongqiang Lu, & Bhat, I. (1996). Electrical Characterization Of Mg Doped Ga N Grown By Metalorganic Vapor Phase Epitaxy. Applied Physics Letters, 68(17), 2392-4. and may be found at http://link.aip.org/link/?apl/68/2392