Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy

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dc.contributor.authorHuang, Jen-Wuen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.contributor.authorLu, Hongqiangen_US
dc.contributor.authorBhat, Ishwaraen_US
dc.date.accessioned2007-07-13T19:29:54Z
dc.date.available2007-07-13T19:29:54Z
dc.date.issued1996en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent80015 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationThe following article appeared in Huang, J.W., Kuech, T.F., Hongqiang Lu, & Bhat, I. (1996). Electrical Characterization Of Mg Doped Ga N Grown By Metalorganic Vapor Phase Epitaxy. Applied Physics Letters, 68(17), 2392-4. and may be found at http://link.aip.org/link/?apl/68/2392en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.116144en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10654
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleElectrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxyen_US

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