On the operation configuration of SiGe HBTs based on power gain analysis
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Ma, Zhenqiang
Jiang, Ningyue
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http://dx.doi.org/10.1109/TED.2004.842541
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Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
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Ma, Z., & Jiang, N. (2005). On The Operation Configuration Of Si Ge Hb Ts Based On Power Gain Analysis. Ieee Transactions On Electron Devices, 52(2), 248-255.