On the operation configuration of SiGe HBTs based on power gain analysis

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dc.contributor.authorMa, Zhenqiangen_US
dc.contributor.authorJiang, Ningyueen_US
dc.date.accessioned2007-07-13T19:32:34Z
dc.date.available2007-07-13T19:32:34Z
dc.date.issued2005en_US
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent338490 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.identifier.citationMa, Z., & Jiang, N. (2005). On The Operation Configuration Of Si Ge Hb Ts Based On Power Gain Analysis. Ieee Transactions On Electron Devices, 52(2), 248-255.en_US
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2004.842541en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11006
dc.publisherInstitute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United Statesen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=16en_US
dc.rightsCopyright 2005 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleOn the operation configuration of SiGe HBTs based on power gain analysisen_US

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